2N3906-AP

MICRO COMMERCIAL COMPONENTS  2N3906-AP  双极性晶体管, PNP, 40VDC, TO-92

Compared to other transistors, the PNP general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.