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FDMS86104

FAIRCHILD SEMICONDUCTOR  FDMS86104  晶体管, MOSFET, N沟道, 16 A, 100 V, 0.02 ohm, 10 V, 2.9 V

The is a N-channel MOSFET is produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.

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Shielded gate MOSFET technology
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Advanced package and silicon combination for low RDS ON and high efficiency
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MSL1 Robust package design
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100% UIL tested

FDMS86104 PDF数据文档
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