IGP01N120H2XKSA1

Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin3+Tab TO-220AB Tube

This IGBT transistor from Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 28000 mW. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.