MA4E1319-1

砷化镓倒装芯片肖特基势垒二极管 GaAs Flip Chip Schottky Barrier Diodes

Description and Applications

M/A-COM"s MA4E1317 single, MA4E1318 anti parallel pair, reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flipchip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

The protective coatings prevent damage to the junction during automated or manual handling.

The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency

of these diodes allowsuse through millimeter wave frequencies. Typical applications include

single and double balanced mixers in PCN transceivers and radios, police radar detectors,

and automotive radar detectors. The devices can be used through 80 GHz.

Features

•  Low Series Resistance

•  Low Capacitance

•  High Cutoff Frequency

•  Silicon Nitride Passivation

•  Polyimide Scratch Protection

•  Designed for Easy Circuit Insertion