BC849CE6327HTSA1

Infineon BC849CE6327HTSA1 , NPN 双极晶体管, 100 mA, Vce=30 V, HFE:420, 250 MHz, 3引脚 SOT-23封装

小信号 NPN ，

得捷:
TRANS NPN 30V 0.1A SOT-23

欧时:
Infineon BC849CE6327HTSA1 , NPN 双极晶体管, 100 mA, Vce=30 V, HFE:420, 250 MHz, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT AF TRANSISTORS

艾睿:
Implement this versatile NPN BC849CE6327HTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 30V 0.1A 3-Pin SOT23 T/R

Chip1Stop:
Trans GP BJT NPN 30V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 30V 0.1A 330mW Automotive 3-Pin SOT-23 T/R