STW6NC90Z

N沟道900V - 2.1ohm - 5.2A TO- 247齐纳保护PowerMESH⑩III MOSFET N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET

DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.

■ TYPICAL RDSon = 2.1Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ GATE-TO-SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT