MMBFJ113

FAIRCHILD SEMICONDUCTOR  MMBFJ113.  场效应管, N沟道

最大源漏极电压VdsDrain-Source Voltage | 35v \---|--- 栅源极击穿电压VBRGSGate-Source Voltage | -35v 漏极电流Vgs=0VIDSSDrain Current | 2ma 关断电压VgsoffGate-Source Cut-off Voltage | -0.5~-3v 耗散功率PdPower Dissipation | 350mW/0.35W Description & Applications | N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. 描述与应用 | N沟道开关 该设备是专为低级别的模拟开关，采样 保持电路和斩波稳定放大器。

欧时:
### N 通道 JFET，Fairchild Semiconductor### JFET 晶体管一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。

贸泽:
JFET N-Channel Switch

e络盟:
FAIRCHILD SEMICONDUCTOR  MMBFJ113  晶体管, JFET, JFET, -35 V, 2 mA, -3 V, SOT-23, JFET

艾睿:
Trans JFET N-CH 3-Pin SOT-23 T/R

安富利:
Trans JFET N-CH 3-Pin SOT-23 T/R

富昌:
MMBFJ113系列 35 V 2 mA 表面贴装 N沟道 开关 - SOT-23

TME:
Transistor: N-JFET; unipolar; 350mW; SOT23; 50mA

Verical:
Trans JFET N-CH 3-Pin SOT-23 T/R

Newark:
# FAIRCHILD SEMICONDUCTOR  MMBFJ113  JFET Transistor, Junction Field Effect, -35 V, 2 mA, -3 V, SOT-23, JFET

Win Source:
JFET N-CH 35V 350MW SOT23