2STF1340
STMICROELECTRONICS 2STF1340 单晶体管 双极, NPN, 40 V, 100 MHz, 1.4 W, 3 A, 280 hFE
Description
The device in a NPN transistor manufactured using new “PB-HCD” Power Bipolar High Current Density technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STF2340.
General features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-89 plastic package for surface mounting circuits
■ In compliance with the 2002/93/EC European Directive
Applications
■ LED
■ Motherboard & hard disk drive
■ Mobile equipment
■ Battery charger
■ Voltage regulation