M45PE80-VMP6G

MICRON  M45PE80-VMP6G  闪存, 低电压, 可擦除页, 字节变更, 8 MB, 1M x 8位, 25 MHz, 串行, SPI, VFQFPN, 8 引脚

The is a 80Mb micron serial NOR Flash Memory Device accessed by a high-speed, SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time using the page write or page program command. The page write command consists of an integrated page erase cycle followed by a page program cycle. The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 4096 pages or 1048576 bytes. The memory can be erased one page at a time using the page erase command or one sector at a time using the sector erase command.

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Hardware writes protection of the bottom memory area 64KB

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Electronic signature - JEDEC-standard, 2-byte signature 4014h

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Deep power-down mode - 1µA typical

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>100000 Write cycles per sector

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>20 Years of data retention