FQD7N10LTM

FAIRCHILD SEMICONDUCTOR  FQD7N10LTM  晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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100% Avalanche tested

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4.6nC Typical low gate charge

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12pF Typical low Crss