FQB8N60CF

600V N沟道MOSFET 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transis tors are produced using ’s proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Features

• 6.26A, 600V, R

DSon= 1.5 Ω@VGS= 10 V

• Low gate charge typical 28nC

• Low Crss typical 12pF

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability