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IS62WV102416BLL-25MI

SRAM Chip Async Single 2.5V/3.3V 16M-bit 1M x 16 25ns 48Pin TFBGA

DESCRIPTION

TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

• High-speed access times: 25, 35 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater noise immunity

• Easy memory expansion with CS1 and OE options

• CS1 power-down

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single power supply

VDD 1.65V to 2.2V IS62WV102416ALL

speed = 35ns for VDD 1.65V to 2.2V

VDD 2.4V to 3.6V IS62/65WV102416BLL

speed = 25ns for VDD 2.4V to 3.6V

• Packages available:

– 48-ball miniBGA 9mm x 11mm

– 48-pin TSOP Type I

• Industrial and Automotive Temperature Support

• Lead-free available

• Data control for upper and lower bytes

IS62WV102416BLL-25MI PDF数据文档
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