FGH40T65UQDF-F155

Trans IGBT Chip N-CH 650V 80A 231000mW 3Pin3+Tab TO-247 Tube

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4 generation IGBTs offer superior con-duction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Features

---

 |

.

Maximum Junction Temperature: TJ = 175°C

.

Positive Temperature Co-efficient for Easy Parallel Operating

.

High Current Capability

.

Low Saturation Voltage: VCEsat = 1.33 V Typ. @ IC = 40 A

.

100% of the Parts tested for ILM1

.

High Input Impedance

.

Fast Switching

.

Tighten Parameter Distribution

.

RoHS Compliant