SSM6N03FE

SSM6N03FE 复合场效应管 20V 100mA/0.1A SOT-563/ES6 marking/标记 DA 高速开关

最大源漏极电压VdsDrain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 10V 最大漏极电流IdDrain Current| 100mA/0.1A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1200mΩ@ VGS = 2.5V, ID = 10mA 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.7~1.3V 耗散功率PdPower Dissipation| 150mW/0.15W Description & Applications| TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications ● Input impedance is high. Driving current is extremely low. ● Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. ● High-speed switching. ● Housed in a ultra-small package which is suitable for high density mounting. 描述与应用| 场效应的硅N沟道MOS类型 高速开关应用 模拟开关应用 ●输入阻抗高。驱动电流极低。 ●可直接驱动CMOS器件即使在低电压低栅极阈值电压。 ●高速开关。 ●坐落在一个超小型封装，适用于高密度 安装。