IXGH36N60B3C1

Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin3+Tab TO-247

IGBT PT 600 V 75 A 250 W 通孔 TO-247AD

得捷:
IGBT 600V 75A 250W TO247

艾睿:
This IXGH36N60B3C1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

TME:
Transistor: IGBT; 600V; 36A; 250W; TO247-3

Verical:
Trans IGBT Chip N-CH 600V 75A 250000mW 3-Pin3+Tab TO-247

Win Source:
IGBT 600V 75A 250W TO247