A2G35S200-01SR3

RF Power Transistor,3400 to 3600MHz, 180W, Typ Gain in dB is 16.1 @ 3500MHz, 48V, GaN, SOT1828

Overview

The 40 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.

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## Features

* High Terminal Impedances for Optimal Broadband Performance

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Table

### 3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 291 mA, Pout = 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

3400 MHz| 14.7| 32.4| 7.2| –34.9| –10

3500 MHz| 16.1| 35.3| 7.0| –34.7| –19

3600 MHz| 16.1| 36.7| 6.6| –32.8| –9