MRF101BN

晶体管, 射频FET, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.

.

Mirror pinout versions A and B to simplify use in a push-pull, two-up configuration

.

Characterized from 30 to 50 V

.

Suitable for linear application

.

Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation

.

Included in product longevity program with assured supply for a minimum of 15 years after launch