BUK7575-100A

NXP  BUK7575-100A  晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V

The is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.

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Low conduction losses due to low ON-state resistance

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Suitable for standard level gate drive sources

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Suitable for thermally demanding environments due to 175°C rating

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-55 to 175°C Junction temperature range