FM24C64B

64-Kbit8K × 8bit，I2C接口，工作电压：5V

Description

The is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Features

64K bit Ferroelectric Nonvolatile RAM

•  Organized as 8,192 x 8 bits

•  High Endurance 1 Trillion 1012 Read/Writes

•  38 Year Data Retention

•  NoDelay™ Writes

•  Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

•  Up to 1 MHz maximum bus frequency

•  Direct hardware replacement for EEPROM

•  Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

•  5V operation

•  100 µA Active Current 100 kHz

•  4 µA typ. Standby Current

Industry Standard Configuration

•  Industrial Temperature -40°C to +85°C

•  8-pin “Green”/RoHS SOIC -G