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TMS45160

262 144 字 x 16 位高速动态随机存取存储器

EPIC is a trademark of Texas Instruments Incorporated.

The series are high-speed, 4194304-bit dynamic random-access memories organized as 262144 words of 16 bits each. The TMS45160P series are high-speed, low-power, self-refresh 4194304-bit dynamic random-access memories organized as 262144 words of 16 bits each. They employ state-of-the-art EPICTM Enhanced Performance Implanted CMOS technology for high performance, reliability, and low power at low cost.

These devices feature maximum RAS\ access times of 60 ns, 70 ns, and 80 ns. Maximum power dissipation is as low as 770 mW operating and 11 mW standby on 80-ns devices. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS45160 and TMS45160P are each offered in a 40-lead plastic surface-mount SOJ package DZ suffix and a 40/44-lead plastic surface-mount small-outline TSOP package DGE suffix. These packages are characterized for operation from 0°C to 70°C.

_This data sheet is applicable to all TMS45160/Ps symbolized with Revision "D" and subsequent revisions as described on page 21._

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Organization...262144 × 16
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5-V Supply ±10% Tolerance
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Performance Ranges:
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Enhanced-Page-Mode Operation With **xCAS**\\-Before- **RAS**\ xCBR Refresh
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Long Refresh Period

512-Cycle Refresh in 8 ms Max

64 ms Max for Low Power With

Self-Refresh Version TMS45160P

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3-State Unlatched Output
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Low Power Dissipation
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Texas Instruments EPICTM ** **CMOS Process
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All Inputs, Outputs, and Clocks Are TTL Compatible
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High-Reliability, 40-Lead, 400-Mil-Wide Plastic Surface-Mount SOJ Package and 40/44-Lead Thin Small-Outline Package TSOP
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Operating Free-Air Temperature Range

0°C to 70°C

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Low Power With Self-Refresh Version
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Upper and Lower Byte Control During Read and Write Operations

TMS45160 PDF数据文档
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