IRF1404ZLPBF
Trans MOSFET N-CH Si 40V 190A 3Pin3+Tab TO-262
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
艾睿:
Trans MOSFET N-CH Si 40V 190A 3-Pin3+Tab TO-262
DeviceMart:
MOSFET N-CH 40V 120A TO-262
