STB8NA50

N - 沟道增强模式快速功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDSon = 0.7 Ω

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100oC

■ LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

■ THROUGH-HOLE I2PAK TO-262 POWER PACKAGE IN TUBE SUFFIX ”-1”

■ SURFACE-MOUNTING D2PACK TO-263 POWER PACKAGE IN TUBE NO SUFFIX OR IN TAPE & REEL SUFFIX ”T4”

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES SMPS

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE