RJH60F5DPK-00#T0

Trans IGBT Chip N-CH 600V 80A 260400mW 3Pin3+Tab TO-3P

This IGBT transistor from Renesas is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 260400 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trench technology. It is made in a single configuration.