FS215R04A1E3DBOMA1

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Summary of Features:

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Complete 3-phase Six-Pack with NTC in one compact module

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High efficient 400Vces Ultra Thin Wafer Trench-Field-Stop IGBT3 with matching 400V Emitter Controlled 3 diode.

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Increased diode current capability optimized for generator mode in hybrid electric vehicles

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25% reduced gate charge compared to IGBT3 650V reduces gate driver power losses

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Enhanced wire bonding

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Rugged Al 2O 3 ceramic for automotive applications with high thermal cycle requirements

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Copper base plate for optimized cooling

Benefits:

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High efficient system approach for DCL voltages up to 200V

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High reliability

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Same mounting as HybridPACK1 modules with 650V chipset modular approach