AFT21S232SR3

RF Power Transistor,2110 to 2170MHz, 182W, Typ Gain in dB is 16.7 @ 2110MHz, 28V, LDMOS, SOT1793

Overview

The 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* NI-780S-2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.

## Features RF Performance Table

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 16.7| 30.5| 7.2| –35.7| –19

2140 MHz| 17.0| 31.0| 7.1| –35.4| –20

2170 MHz| 17.2| 31.8| 7.0| –34.8| –15