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1N4099

低反向漏电流和低噪音等特点 LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS

• UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435

• LEADLESS PACKAGE FOR SURFACE MOUNT

• LOW CURRENT OPERATION AT 250 µA

• METALLURGICALLY BONDED

MAXIMUM RATINGS

Junction and Storage Temperature: -65°C to +175°C

DC Power Dissipation: 500mW @ TEC= +125°C

Power Derating: 10mW/ °C above TEC= +125°C

Forward Derating @ 200 mA: 1.1 Volts maximum

1N4099 PDF数据文档
图片 型号 厂商 下载
1N4099 Microsemi 美高森美
1N4001G ON Semiconductor 安森美
1N4006G ON Semiconductor 安森美
1N4006RLG ON Semiconductor 安森美
1N4002RLG ON Semiconductor 安森美
1N4003 Fairchild 飞兆/仙童
1N4003-E3/54 Vishay Semiconductor 威世
1N4007-E3/54 Vishay Semiconductor 威世
1N4004G ON Semiconductor 安森美
1N4001 Fairchild 飞兆/仙童
1N4007 Fairchild 飞兆/仙童