A3T21H450W23SR6
射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
Overview
The A3T21H450W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
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## Features
* Advanced high performance in-package Doherty
* Designed for wide instantaneous bandwidth applications
* Greater negative gate-source voltage range for improved Class C operation
* Able to withstand extremely high output VSWR and broadband operating conditions
* Designed for digital predistortion error correction systems
* RoHS compliant
## Features RF Performance Table
### 2100 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 30 Vdc, IDQA = 600 mA, VGSB = 0.5 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
2110 MHz| 15.1| 48.5| 8.1| –30.2
2155 MHz| 15.7| 48.9| 7.9| –30.2
2200 MHz| 15.3| 47.2| 7.8| –33.7