BSC750N10NDGATMA1

INFINEON  BSC750N10NDGATMA1  晶体管, MOSFET, N沟道, 13 A, 100 V, 62 mohm, 10 V, 3 V

OptiMOS™2 功率 MOSFET 系列

Infineon

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET 2N-CH 100V 3.2A 8TDSON

欧时:
Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSC750N10NDGATMA1, 13 A, Vds=100 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 13 A, 0.062 ohm, PG-TDSON, 表面安装

艾睿:
Use Infineon Technologies&s; BSC750N10NDGATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 100V 3.2A 8-Pin TDSON T/R

富昌:
BSC750N10ND 系列 100 V 75 mOhm N沟道 OptiMOS™2 功率 晶体管- PG-TDSON-8

TME:
Transistor: N-MOSFET; unipolar; 100V; 13A; 26W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC750N10NDGATMA1  MOSFET Transistor, N Channel, 13 A, 100 V, 62 mohm, 10 V, 3 V