IXDR30N120

IXYS SEMICONDUCTOR  IXDR30N120  单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚

This powerful and secure IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

得捷:
IGBT 1200V 50A 200W ISOPLUS247

贸泽:
IGBT Transistors 30 Amps 1200V

e络盟:
单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚

艾睿:
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin3+Tab ISOPLUS 247

富昌:
IXDR 系列 1200 Vce 50 A 100 ns ton 高压 IGBT - ISOPLUS 247

Newark:
# IXYS SEMICONDUCTOR  IXDR30N120  IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins