IPG20N10S4L22AATMA1

双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V

MOSFET - 阵列 2 N-通道（双） 100V 20A 60W 表面贴装，可润湿侧翼 PG-TDSON-8-10

欧时:
INFINEON MOSFET IPG20N10S4L22AATMA1

得捷:
MOSFET 2N-CH 100V 20A TDSON-8

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPG20N10S4L22AATMA1 power MOSFET. Its maximum power dissipation is 60000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos-t2 technology.

安富利:
Trans MOSFET N-CH 100V 20A 8-Pin TDSON T/R

Win Source:
MOSFET 2N-CH 100V 20A TDSON-8