APT200GN60J

功率半导体功率模块射频功率MOSFET Power Semiconductors Power Modules RF Power MOSFETs

This fast-switching IGBT transistor from will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 682000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.