FDC8601
FAIRCHILD SEMICONDUCTOR FDC8601. 场效应管, MOSFET, N沟道, 100V, 0.086Ω, 2.7A, SUPERSOT-6
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It is suitable for use in load switch, synchronous rectifier and primary switch applications.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability in a widely used surface-mount package
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- Fast switching speed
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- 100% UIL tested