IRFL110PBF

VISHAY  IRFL110PBF.  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V

The is a 100V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The SOT-223 package is designed for surface-mount using vapour phase, infra-red or wave soldering techniques. Its unique package design allows for easy automatic pick-and place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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150°C Operating temperature

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Easy to parallel

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Simple drive requirement

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Fast switching