STH6N100

N - 沟道增强型功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDSon= 0.045Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100oC

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ LOGIC LEVEL COMPATIBLE INPUT

■ 175oC OPERATING TEMPERATURE

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.