3STL2540

低电压高性能PNP功率晶体管 Low voltage high performance PNP power transistor

- 双极 BJT - 单 PNP 40 V 5 A 130MHz 1.2 W 表面贴装型 PowerFlat™（2x2）

得捷:
TRANS PNP 40V 5A POWERFLAT3

艾睿:
The three terminals of this PNP 3STL2540 GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT PNP 40V 5A 3-Pin Power Flat EP T/R

DeviceMart:
TRANS PNP 40V 5A POWERFLAT3