IPD65R660CFDBTMA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

表面贴装型 N 通道 6A（Tc） 62.5W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 650V 6A TO252-3

贸泽:
MOSFET LOW POWER_LEGACY

e络盟:
晶体管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V

艾睿:
Use Infineon Technologies&s; IPD65R660CFDBTMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 62500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes coolmos cfd2 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

TME:
Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3

Win Source:
MOSFET N-CH 650V 6A TO252