TMS28F800AZB
1 048 576 x 8 位、524 288 x 16 位自动选择引导块闪存
* Organization... 1048576 By 8 Bits
524288 By 16 Bits
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- Array-Blocking Architecture
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- Two 8K-Byte/4K-Word Parameter Blocks
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- One 96K-Byte/48K-Word Main Block
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- Seven 128K-Byte/64K-Word Main Blocks
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- One 16K-Byte/8K-Word Protected Boot Block
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- Top or Bottom Boot Locations
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- All Inputs/Outputs TTL-Compatible
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- Maximum Access/Minimum Cycle Time
5-V VCC 3-V VCC
"28F008Axy70 70 ns 100 ns
"28F008Axy80 80 ns 120 ns
"28F800Axy70 70 ns 100 ns
"28F800Axy80 80 ns 120 ns
See Table 1 for VCC/VPP Voltage Configuration
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- 100000- and 10000-Program/Erase Cycle Versions
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- Three Temperature Ranges
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- Commercial...0°C to 70°C
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- Extended...- 40°C to 85°C
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- Automotive...- 40°C to 125°C
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- Embedded Program/Erase Algorithms
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- Automated Byte Programming
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- Automated Word Programming
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- Automated Block Erase
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- Erase Suspend/Erase Resume
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- Automatic Power-Saving Mode
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- JEDEC Standards Compatible
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- Compatible With JEDEC Byte/Word Pinouts
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- Compatible With JEDEC EEPROM Command Set
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- Fully Automated On-Chip Erase and Byte/Word Program Operations
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- Package Options
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- 44-Pin Plastic Small-Outline Package PSOP DBJ Suffix
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- 40-Pin Thin Small-Outline Package TSOP DCD Suffix
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- 48-Pin TSOP DCD Suffix
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- 48-Ball Micro Ball Grid Array
uBGATM available
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- Low Power Dissipation VCC = 5.5 V
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- Active Write...330 mW Byte Write
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- Active Read...220 mW Byte Read
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- Active Write...330 mW Word Write
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- Active Read...275 mW Word Read
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- Block Erase...330 mW
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- Standby...0.55 mW CMOS-Input Levels
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- Deep Power-Down Mode...0.044 mW
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- Write-Protection for Boot Block
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- Industry Standard Command-State Machine CSM
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- Erase Suspend/Resume
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- Algorithm-Selection Identifier
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- Flexible VPP/Supply Voltage Combination
uBGA is a trademark of Tessera, Inc.
## description
The TMS28F800Axy is a 8388608-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:
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- One 16K-byte/8K-word protected boot block
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- Two 8K-byte/4K-word parameter blocks
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- One 96K-byte/48K-word main block
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- Seven 128K-byte/64K-word main blocks
The device can be ordered in four different voltage configurations see Table 1. Operation as a 1024K-byte 8-bit or a 512K-word 16-bit organization is user-definable.
Embedded program and block-erase functions are fully automated by the on-chip write-state machine WSM, simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.
The TMS28F800AEy configuration allows the user to perform memory reads using 2.7-3.6-V VCC and 5-V VCC for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V,
5 V, or 12-V. This configuration is offered in the commercial temperature range 0°C to 70°C and the extended temperature range -40°C to 85°C. Also, TMS28F800ASy offers VCC = 3 - 3.6 V and VCC = 5 V for optimum power consumption. The TMS28F800ALy configuration allows performance of memory reads using
VCC = 3.0 - 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of memory reads using VCC = 2.7-3.6 V for optimum power consumption.
The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This configuration is offered in three temperature ranges: 0°C to 70°C, - 40°C to 85°C, - 40°C to 125°C.
The TMS28F800Axy is offered in a 44-pin plastic small-outline package PSOP and a 48-pin thin small-outline package TSOP organized as 16-bit or 8-bit.
The TMS28F008 is functionally equivalent to the "F800 except that it is organized only as a 8-bit configuration, and it is offered only in a 40-pin TSOP.
