BFG540W/XR

NPN 9 GHz宽带晶体管 NPN 9 GHz wideband transistor

DESCRIPTION

NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

  They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones CT2, CT3, PCN, DECT, etc., radar detectors, pagers, satellite television tuners SATV, MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.