2SB798

PNP功率晶体管

POWER TRANSISTOR

DESCRIPTION

The is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.

FEATURES

* Low Collector Saturation Voltage:VCEsat< -0.4V Ic = -1.0A, IB = -100mA

* Excellent DC Current Gain Linearity :hFE = 100 Typ. VCE = -1.0V, IC = -1.0A