PMV32UP

NXP  PMV32UP  晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV

The is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications.

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1.8V Drain-source ON-state resistance rated

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Very fast switching

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-55 to 150°C Junction temperature range