IPB081N06L3 G

INFINEON  IPB081N06L3 G  晶体管, MOSFET, N沟道, 50 A, 60 V, 6.7 mohm, 10 V, 1.7 V

Summary of Features:

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Excellent gate charge x R DSon product FOM

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Very low on-resistance R DSon

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Ideal for fast switching applications

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RoHS compliant - halogen free

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MSL1 rated

Benefits:

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Highest system efficiency

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Less paralleling required

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Increased power density

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System cost reduction

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Very low voltage overshoot