IDH10S120AKSA1

INFINEON  IDH10S120AKSA1  二极管, 碳化硅肖特基, SIC, thinQ 2G 1200V系列, 单, 1.2 kV, 10 A, 36 nC, TO-220

The IDH10S120 is a thinQ!™ 2nd generation 1200V SiC Schottky Diode with revolutionary semiconductor material silicon carbide. It is the highest voltage family of SiC Schottky discrete diodes and is now being extended with the TO-247 package. The very good thermal characteristics of the TO-247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in motor drives, solar applications, UPS, SMPS CCM, PFC, server, telecom and AC-DC applications.

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Temperature independent switching behaviour

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Pb-free lead plating

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Qualified according to JEDEC for target applications

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Breakdown voltage tested at 20mA

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Optimized for high temperature operation

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Lowest Figure of Merit QC/IF

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System efficiency improvement compared to Si diodes

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Reduced cooling requirements

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Enabling higher frequency/increased power density

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Higher system reliability due to lower operating temperature

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Reduced EMI

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High operating temperature Tj max 175°C