锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

UGB5JT-E3/81

高压超快整流器 High Voltage Ultrafast Rectifier

FEATURES

• Glass passivated chip junction

• Ultrafast recovery time

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder dip 260 °C, 40 s for TO-220AC and ITO-220AC package

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


得捷:
DIODE GEN PURP 600V 5A TO263AB


贸泽:
整流器 600 Volt 5.0A 25ns 65 Amp IFSM


艾睿:
Diode Switching 600V 5A 3-Pin2+Tab TO-263AB T/R


安富利:
Diode Switching 600V 5A 3-Pin2+Tab TO-263AB T/R


UGB5JT-E3/81 PDF数据文档
图片 型号 厂商 下载
UGB5JT-E3/81 Vishay Semiconductor 威世
UGB5JTHE3/81 Vishay Semiconductor 威世
UGB5HTHE3/45 Vishay Semiconductor 威世
UGB5JTHE3/45 Vishay Semiconductor 威世
UGB5JT-E3/45 Vishay Semiconductor 威世
UGB5HT-E3/81 Vishay Semiconductor 威世
UGB5HTHE3/81 Vishay Semiconductor 威世
UGB5JT Vishay Semiconductor 威世