BUL1102EFP

STMICROELECTRONICS  BUL1102EFP  单晶体管 双极, NPN, 450 V, 30 W, 4 A, 20 hFE

The is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

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High voltage capability

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Very high switching speed