IRF630NPBF

INTERNATIONAL RECTIFIER  IRF630NPBF  场效应管, N 通道, MOSFET, 200V, 9.3A, TO-220AB 新

**N-Channel Power MOSFET 8A to 12A, Infineon**

The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

e络盟:
场效应管, N 通道, MOSFET, 200V, 9.3A, TO-220AB

艾睿:
Trans MOSFET N-CH 200V 9.3A 3-Pin3+Tab TO-220AB Tube

Verical:
Trans MOSFET N-CH 200V 9.3A 3-Pin3+Tab TO-220AB Tube

DeviceMart:
HEXFET Power MOSFET, N채널 Vdss = 200V, Rdson = 0.30Ω , Id = 9.3A