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STGF30H60DF

Trans IGBT Chip N-CH 600V 34A 31000mW 3Pin3+Tab TO-220FP Tube

This IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 31000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

STGF30H60DF PDF数据文档
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