IGCM20F60GAXKMA1

智能功率模块 IPM, IGBT, 600 V, 20 A, 2 kV, DIP, CIPOS

* reverse conducting IGBTs with monolithic body diode * Rugged SOI gate driver technology with stability against transient and negative voltage * Allowable negative VS potential up to -11V for signal transmission at VBS=15V * Integrated bootstrap functionality * Over current shutdown * Temperature monitor * Under-voltage lockout at all channels * Low side emitter pins accessible for all phase current monitoring open emitter * Cross-conduction prevention * All of 6 switches turn off during protection * Lead-free terminal plating; RoHS compliant