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BCP5616TC

Trans GP BJT NPN 80V 1A 2000mW Automotive 4Pin3+Tab SOT-223 T/R

Features

•IC= 1A Continuous Collector Current

• Low Saturation Voltage VCEsat < 500mV @ 0.5A

• Gain groups 10 and 16

• Epitaxial Planar Die Construction

• Complementary PNP types: BCP51, 52 and 53


立创商城:
BCP5616TC


得捷:
TRANS NPN 80V 1A SOT223-3


艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BCP5616TC GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.


安富利:
Trans GP BJT NPN 80V 1A 4-Pin3+Tab SOT-223 T/R


Verical:
Trans GP BJT NPN 80V 1A Automotive 4-Pin3+Tab SOT-223 T/R


儒卓力:
**NPN TRANSISTOR 80V 1A SOT223 **


BCP5616TC PDF数据文档
图片 型号 厂商 下载
BCP5616TC Diodes 美台
BCP56 NXP 恩智浦
BCP53T1G ON Semiconductor 安森美
BCP56-16T1G ON Semiconductor 安森美
BCP53 NXP 恩智浦
BCP51 NXP 恩智浦
BCP55,135 NXP 恩智浦
BCP56-10T1G ON Semiconductor 安森美
BCP56-10,135 NXP 恩智浦
BCP53-10,135 NXP 恩智浦
BCP54-16,135 NXP 恩智浦