SI1869DH-T1-E3

VISHAY  SI1869DH-T1-E3  负载开关, MOSFET, N/P, 20V, SC-70

The is a N/P-channel MOSFET ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. The low ON-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5V.

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TrenchFET® power MOSFET

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Low profile

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Small footprint

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Adjustable slew-rate