BZX585-B6V2
BZX585-B6V2 稳压二极管 6.2V 300mW/0.3W SOD523/0603-6.2V marking/标记 E1 低功耗
• Voltage regulator diodes • Total power dissipation: max. 300 mW • Non-repetitive peak reverse power dissipation: max.40 W. • Low-power voltage regulator diodes
BZX585-B6V2 PDF数据文档
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | BZX585-B6V2 | NXP 恩智浦 | |
| BZX55C5V6 | ST Microelectronics 意法半导体 | |
| BZX55C20 | ST Microelectronics 意法半导体 | |
 | BZX55C18 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C4V7 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C5V6 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C15 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C4V3 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C10 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C8V2 R0 | Taiwan Semiconductor 台湾半导体 | |
 | BZX55C5V1 R0 | Taiwan Semiconductor 台湾半导体 |